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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD113 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) *High Power Dissipation *High Current Capability APPLICATIONS *Audio power amplifier, power switching applications. *DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i MAX 100 80 10 30 -30 5 UNIT V V .cn mi e V A IE Emitter Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 200 W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA; RBE= MIN TYP. 2SD113 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 15A; IB= 3A VCB= 50V; IE= 0 2.5 V Collector Cutoff Current 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications O 50-150 Y 100-300 w ww scs .i IC= 1A; VCE= 5V IC= 15A; VCE= 5V IE= 0; VCB= 50V; ftest= 1.0MHz .cn mi e 50 10 50 mA 300 400 pF IC= 1A; VCE= 10V 1.5 MHz isc Websitewww.iscsemi.cn |
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